Strain-induced lateral self-organization in Si/ SiO2 nanostructures

Document Type

Article

Publication Date

2-8-2010

Abstract

We show that strain, arising from the mismatch between Si and SiO 2 thermal expansion coefficients, directs the thermal crystallization of amorphous Si along Si/ SiO2 interfaces, and produces continuous, fully crystallized nanometer thick Si layers with a lateral-to-vertical aspect ratio close to 100:1. These Si nanolayers exhibit a low density of structural defects and are found to be elastically strained with respect to the crystal Si substrate. © 2010 American Institute of Physics.

Identifier

75749107437 (Scopus)

Publication Title

Applied Physics Letters

External Full Text Location

https://doi.org/10.1063/1.3290250

ISSN

00036951

Issue

1

Volume

96

Grant

ECCS 0725443

Fund Ref

National Science Foundation

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