Metal-organic vapour phase epitaxy of BInGaN quaternary alloys and characterization of boron content
Document Type
Article
Publication Date
2-15-2010
Abstract
BInGaN quaternary alloys with up to 2% boron and 14% of indium have been grown on GaN/sapphire template substrates by metal-organic vapour phase epitaxy (MOVPE). Epitaxial layer composition was determined by secondary ion mass spectroscopy (SIMS), and confirmed by X-ray photoelectron spectroscopy (XPS). Bandgap energies were measured using optical transmission and reflection spectroscopy. We find that boron incorporation in BInGaN reduces the bandgap, causing an effect similar to the increase of indium content in InGaN. However, adding boron has the advantage of decreasing the lattice mismatch with conventional GaN substrates. © 2009 Elsevier B.V. All rights reserved.
Identifier
74949118049 (Scopus)
Publication Title
Journal of Crystal Growth
External Full Text Location
https://doi.org/10.1016/j.jcrysgro.2009.11.040
ISSN
00220248
First Page
641
Last Page
644
Issue
5
Volume
312
Recommended Citation
Gautier, S.; Orsal, G.; Moudakir, T.; Maloufi, N.; Jomard, F.; Alnot, M.; Djebbour, Z.; Sirenko, A. A.; Abid, M.; Pantzas, K.; Ferguson, I. T.; Voss, P. L.; and Ougazzaden, A., "Metal-organic vapour phase epitaxy of BInGaN quaternary alloys and characterization of boron content" (2010). Faculty Publications. 6391.
https://digitalcommons.njit.edu/fac_pubs/6391
