ASIC for SDD-based X-ray spectrometers

Document Type

Article

Publication Date

6-1-2010

Abstract

We present an application-specific integrated circuit (ASIC) for high-resolution x-ray spectrometers (XRS). The ASIC reads out signals from pixelated silicon drift detectors (SDDs). The pixel does not have an integrated field effect transistor (FET); rather, readout is accomplished by wire-bonding the anodes to the inputs of the ASIC. The ASIC dissipates 32 mW, and offers 16 channels of low-noise charge amplification, high-order shaping with baseline stabilization, discrimination, a novel pile-up rejector, and peak detection with an analog memory. The readout is sparse and based on custom low-power tristatable low-voltage differential signaling (LPT-LVDS). A unit of 64 SDD pixels, read out by four ASICs, covers an area of 12.8 cm2 and dissipates with the sensor biased about 15 mW/cm2 . As a tile-based system, the 64-pixel units cover a large detection area. Our preliminary measurements at -44°C show a FWHM of 145 eV at the 5.9 keV peak of a 55Fe source, and less than 80 eV on a test-pulse line at 200 eV. © 2010 IEEE.

Identifier

77953724895 (Scopus)

Publication Title

IEEE Transactions on Nuclear Science

External Full Text Location

https://doi.org/10.1109/TNS.2010.2044809

ISSN

00189499

First Page

1654

Last Page

1663

Issue

3 PART 3

Volume

57

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