Synthesis and characterization of plasma assisted chemically vapor deposited tantalum

Document Type

Article

Publication Date

7-30-2010

Abstract

This study focuses on the synthesis of tantalum (Ta) coatings on high strength steel by plasma assisted chemical vapor deposition using tantalum pentachloride (TaCl5) as a preferred precursor and hydrogen (H 2) as a reducing agent. The interrelationships governing the growth kinetics, compositions, and coating properties are discussed as a function of deposition temperature, total pressure, and gas composition. The synthesized tantalum coatings are shown to be essentially pure with trace amounts of oxygen, carbon, and chlorine. The coatings are found to be dense and to exhibit conformal coverage. Preferential formation of the α-Ta phase is noted to occur when coatings are grown sequentially and in-situ on a TaNx seed layer. © 2010 Elsevier B.V.

Identifier

77955654187 (Scopus)

Publication Title

Thin Solid Films

External Full Text Location

https://doi.org/10.1016/j.tsf.2010.04.014

ISSN

00406090

First Page

5452

Last Page

5456

Issue

19

Volume

518

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