Reverse resistance switching in polycrystalline Nb2O5 films

Document Type

Conference Proceeding

Publication Date

8-2-2010

Abstract

The reverse resistance switching is observed in polycrystalline Nb 2O5 film, which is one of promising candidates for nonvolatile resistance random access memory (ReRAM) devices. This reverse switching is compared with the usual behavior, in which the switching voltage VLH from low resistance (LR) to high resistance (HR) states is lower than VHL from HR to LR states. Based on these experiments, we propose a phenomenological mechanism for the resistance switching, which assumes the coexistence of LR and HR phases and the percolation transition. © 2009 Published by Elsevier B.V.

Identifier

77955402537 (Scopus)

Publication Title

Thin Solid Films

External Full Text Location

https://doi.org/10.1016/j.tsf.2009.10.026

ISSN

00406090

First Page

5676

Last Page

5678

Issue

20

Volume

518

Grant

W–31–109–ENG–38

Fund Ref

U.S. Department of Energy

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