P-Doping limit and donor compensation in CdTe polycrystalline thin film solar cells

Authors

Ken K. Chin, New Jersey Institute of Technology

Document Type

Article

Publication Date

10-1-2010

Abstract

Experimental evidence shows that non-shallow acceptor states defect complex VCd-ClTe|0/- and Cu substitution of Cd CuCd|0/- play critical roles in p-doping of CdTe in CdS/CdTe thin film solar cells. In this work, two equations are presented by using graphic method, one to determine the limit of p-doping or hole density for such non-shallow acceptor levels, and another to show the quantitative relationship of n-type donor compensation of p-type acceptors in such a material. © 2010 Elsevier B.V.

Identifier

77955416707 (Scopus)

Publication Title

Solar Energy Materials and Solar Cells

External Full Text Location

https://doi.org/10.1016/j.solmat.2010.05.006

ISSN

09270248

First Page

1627

Last Page

1629

Issue

10

Volume

94

Recommended Citation

Chin, Ken K., "P-Doping limit and donor compensation in CdTe polycrystalline thin film solar cells" (2010). Faculty Publications. 6052.
https://digitalcommons.njit.edu/fac_pubs/6052