Synthesis and characterization of nitrogen doped ZnO (ZnO:N) films for solar driven hydrogen production by photoelectrochemical water splitting
Document Type
Conference Proceeding
Publication Date
12-1-2010
Abstract
ZnO:N thin films with reduced bandgaps were synthesized by doping N in ZnO at 100°C followed by postdeposition annealing at 500°C in air for 2 h. All the films were synthesized by rf magnetron sputtering on F-doped tin oxide-coated glass. It is found that N doped ZnO :N thin films exhibited significantly enhanced crystallinity compared to ZnO at the same growth conditions. Furthermore, ZnO:N thin films showed enhanced N incorporation and shift the optical absorption into the visible light regions. As a result, ZnO:N films showed improved PEC response, compared to ZnO thin films. Copyright © 2010 MS&T'10®.
Identifier
79952663537 (Scopus)
ISBN
[9781617820328]
Publication Title
Materials Science and Technology Conference and Exhibition 2010 MS and T 10
First Page
259
Last Page
267
Volume
1
Recommended Citation
Shet, Sudhakar; Yan, Yanfa; Deutsch, Todd; Nuggehalli, Ravindra; Turner, John; and Al-Jassim, Mowafak, "Synthesis and characterization of nitrogen doped ZnO (ZnO:N) films for solar driven hydrogen production by photoelectrochemical water splitting" (2010). Faculty Publications. 5901.
https://digitalcommons.njit.edu/fac_pubs/5901
