Enhanced hole transport in AlGaN deep ultraviolet light-emitting diodes using a double-sided step graded superlattice electron blocking layer

Document Type

Article

Publication Date

1-1-2020

Abstract

In this paper, deep ultraviolet AlGaN light-emitting diodes (LEDs) with a novel double-sided step graded superlattice (DSGS) electron blocking layer (EBL) instead of a conventional EBL have been proposed for ~254 nm wavelength emission. The enhanced carrier transport in theDSGSstructure results in reduced electron leakage into the p-region, improved hole activation and hole injection, and enhanced output power and external quantum efficiency. The calculations show that output power of the DSGS structure is ~3.56 times higher and electron leakage is ~12 times lower, compared to the conventional structure. Moreover, the efficiency droop at 60 mA in the DSGS LED was found to be ~9.1%, which is ~4.5 times lower than the regular LED structure.

Identifier

85096092773 (Scopus)

Publication Title

Journal of the Optical Society of America B Optical Physics

External Full Text Location

https://doi.org/10.1364/JOSAB.399773

e-ISSN

15208540

ISSN

07403224

First Page

2564

Last Page

2569

Issue

9

Volume

37

Grant

1944312

Fund Ref

National Science Foundation

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