Process dependent optimization of dielectric and metal stacks for multilevel resistive random-access memory

Document Type

Conference Proceeding

Publication Date

4-1-2020

Abstract

A HfO2/Al2O3 bilayer structure for a two-terminal ReRAM device with an intention of having multiple resistance states as a function of compliance current (CC) after forming was evaluated. A reduced power consumption was observed when the Al2O3 buffer layer was placed between the top electrode and the HfO2 layer as compared to when it is embedded between the HfO2 layer and the bottom electrode. Gradual resistance change capability was observed with varying CC. The switching power requirement increases even if the Al2O3 buffer layer thickness was decreased when the buffer layer was near the bottom electrode. It was demonstrated that by modifying the deposition process of the top metal layer the switching energy requirement can be altered.

Identifier

85085730174 (Scopus)

ISBN

[9781607688914]

Publication Title

Ecs Transactions

External Full Text Location

https://doi.org/10.1149/09703.0013ecst

e-ISSN

19385862

ISSN

19386737

First Page

13

Last Page

20

Issue

3

Volume

97

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