Dielectric science on today's devices

Document Type

Conference Proceeding

Publication Date

4-1-2020

Abstract

The trends of various high-k gate dielectrics deposited on silicon or germanium is reviewed for logic and memory devices. Initially, Zr and low percentage of Al incorporation into HfO2-based high-k dielectrics gate stack on silicon through different process conditions were outlined. Subsequently, high-k gate stack deposition process on Ge was evaluated to form a stable Ge/high-k interface. We have also looked at the high-k gate dielectric stacks in a MIM capacitor for possible applications in memory and AI hardware.

Identifier

85085856103 (Scopus)

ISBN

[9781607688938]

Publication Title

Ecs Transactions

External Full Text Location

https://doi.org/10.1149/09705.0135ecst

e-ISSN

19385862

ISSN

19386737

First Page

135

Last Page

142

Issue

5

Volume

97

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