Investigation of current collapse and recovery time due to deep level defect traps in β-Ga2O3 HEMT

Document Type

Article

Publication Date

10-1-2020

Abstract

In this paper, drain current transient characteristics of β-Ga2O3 high electron mobility transistor (HEMT) are studied to access current collapse and recovery time due to dynamic population and de-population of deep level traps and interface traps. An approximately 10 min, and 1 h of recovery time to steady-state drain current value is measured under 1 ms of stress on the gate and drain electrodes due to iron (Fe)-doped β-Ga2O3 substrate and germanium (Ge)-doped β-Ga2O3 epitaxial layer respectively. On-state current lag is more severe due to widely reported defect trap EC - 0.82 eV over EC - 0.78 eV, −0.75 eV present in Iron (Fe)-doped β-Ga2O3 bulk crystals. A negligible amount of current degradation is observed in the latter case due to the trap level at EC - 0.98 eV. It is found that occupancy of ionized trap density varied mostly under the gate and gate-source area. This investigation of reversible current collapse phenomenon and assessment of recovery time in β-Ga2O3 HEMT is carried out through 2D device simulations using appropriate velocity and charge transport models. This work can further help in the proper characterization of β-Ga2O3 devices to understand temporary and permanent device degradation.

Identifier

85092510466 (Scopus)

Publication Title

Journal of Semiconductors

External Full Text Location

https://doi.org/10.1088/1674-4926/41/10/102802

ISSN

16744926

Issue

10

Volume

41

Fund Ref

Ministry of Electronics and Information technology

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