High performance electron blocking layer free ultraviolet lightemitting Diodes
Document Type
Conference Proceeding
Publication Date
1-1-2021
Abstract
Though AlGaN ultraviolet (UV) light-emitting diodes (LEDs) have been explored widely, their performance is still limited in the UV B and C regions due to several challenges. Electron leakage is one of the prominent reasons behind the poor performance of AlGaN deep UV LEDs. This problem can be mitigated by integrating the electron-blocking layer (EBL) between the active region and p-region to an extent, not entirely due to the own disadvantages of the EBL. In this regard, we report the achievement of high-performance EBL free AlGaN LEDs using a strip-in-a-barrier structure operating in the UV B and C regions, particularly at 254 nm and 292 nm wavelengths, respectively. Here, we have engineered each quantum barrier by integrating a 1 nm optimized intrinsic AlGaN strip layer in the middle of the QB. The resulting structure could significantly reduce the electron overflow and enhance the output power by ~1.87 times and ~1.48 times for 254 nm and 292 nm LEDs, respectively, compared to the conventional structure. Moreover, internal quantum efficiency droop is reduced notably in the proposed structure at 254 nm and 292 nm wavelengths
Identifier
85108707809 (Scopus)
ISBN
[9781510641952]
Publication Title
Proceedings of SPIE the International Society for Optical Engineering
External Full Text Location
https://doi.org/10.1117/12.2578869
e-ISSN
1996756X
ISSN
0277786X
Volume
11680
Recommended Citation
Jain, Barsha; Velpula, Ravi Teja; Patel, Moulik; and Nguyen, Hieu P.T., "High performance electron blocking layer free ultraviolet lightemitting Diodes" (2021). Faculty Publications. 4512.
https://digitalcommons.njit.edu/fac_pubs/4512
