Effect of HfO2 passivation layer on light extraction efficiency of AlInN nanowire ultraviolet light-emitting diodes
Document Type
Conference Proceeding
Publication Date
1-1-2021
Abstract
One of the probable reasons behind the limitation of light extraction efficiency (LEE) in III-nitride nanowire (NW) deep ultraviolet (UV) light-emitting diodes (LEDs) is the presence of the high surface density states that significantly contribute to the non-radiative recombination near the surface. Herein, we investigate the LEE of a single AlInN NW UV LED in the entire UV wavelength regime using finite-difference time-domain simulations. It is found that these LEDs favor transverse-magnetic (TM) polarized LEE over transverse-electric (TE) polarized emission. Further, we examine the role of the HfO2 surface passivation layer in the improvement of LEE of AlInN NW LED at ~282 nm wavelength. Our results show that the TM-polarized LEE of such LED without any passivation is only ~25.2%, whereas the maximum recorded LEE is ~40.6% with the utilization of 40 nm HfO2 passivation layer. This study provides a promising approach for enhancing the LEE of NW UV LEDs.
Identifier
85107230420 (Scopus)
ISBN
[9781607689164]
Publication Title
Ecs Transactions
External Full Text Location
https://doi.org/10.1149/10203.0035ecst
e-ISSN
19385862
ISSN
19386737
First Page
35
Last Page
42
Issue
3
Volume
102
Grant
1944312
Fund Ref
National Science Foundation
Recommended Citation
Patel, Moulik; Jain, Barsha; Velpula, Ravi Teja; and Nguyen, Hieu Pham Trung, "Effect of HfO2 passivation layer on light extraction efficiency of AlInN nanowire ultraviolet light-emitting diodes" (2021). Faculty Publications. 4461.
https://digitalcommons.njit.edu/fac_pubs/4461