"Effect of HfO2 passivation layer on light extraction efficiency of AlI" by Moulik Patel, Barsha Jain et al.
 

Effect of HfO2 passivation layer on light extraction efficiency of AlInN nanowire ultraviolet light-emitting diodes

Document Type

Conference Proceeding

Publication Date

1-1-2021

Abstract

One of the probable reasons behind the limitation of light extraction efficiency (LEE) in III-nitride nanowire (NW) deep ultraviolet (UV) light-emitting diodes (LEDs) is the presence of the high surface density states that significantly contribute to the non-radiative recombination near the surface. Herein, we investigate the LEE of a single AlInN NW UV LED in the entire UV wavelength regime using finite-difference time-domain simulations. It is found that these LEDs favor transverse-magnetic (TM) polarized LEE over transverse-electric (TE) polarized emission. Further, we examine the role of the HfO2 surface passivation layer in the improvement of LEE of AlInN NW LED at ~282 nm wavelength. Our results show that the TM-polarized LEE of such LED without any passivation is only ~25.2%, whereas the maximum recorded LEE is ~40.6% with the utilization of 40 nm HfO2 passivation layer. This study provides a promising approach for enhancing the LEE of NW UV LEDs.

Identifier

85107230420 (Scopus)

ISBN

[9781607689164]

Publication Title

Ecs Transactions

External Full Text Location

https://doi.org/10.1149/10203.0035ecst

e-ISSN

19385862

ISSN

19386737

First Page

35

Last Page

42

Issue

3

Volume

102

Grant

1944312

Fund Ref

National Science Foundation

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