"Investigation of β-Ga2O3-based HEMTs using 2D Simulations for low nois" by R. Singh, T. R. Lenka et al.
 

Investigation of β-Ga2O3-based HEMTs using 2D Simulations for low noise amplification and RF applications

Document Type

Article

Publication Date

9-1-2021

Abstract

Here we demonstrate a two-dimensional β-gallium oxide-based high electron mobility transistor (HEMT) comprising of a finite gap - access region gap (LARG) inOhmic-contact access regionswith record transconductance linearity. Apart from limiting two-dimensional electron gas (2-DEG) density ns dependency on gate voltage, higher saturation current is estimated for the proposed design. Since access regions length directly affects the Capacitance of the device and resultant switching applications. In this work, the effect of the gate-source and gate-drain length on device linearity is performed using Atlas-2Dsimulations. C - V characteristics of the proposed device are explained based on the physical explanation and validated using appropriate models. The higher values of transconductance gm and current gain cut-off frequency fT on a large span of operating voltages ensure improved transistors' performance and are reported for the first time.

Identifier

85115442277 (Scopus)

Publication Title

Engineering Research Express

External Full Text Location

https://doi.org/10.1088/2631-8695/ac23b3

e-ISSN

26318695

Issue

3

Volume

3

Fund Ref

Science and Engineering Research Board

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