"High-efficiency InGaN blue LEDs with reduced positive sheet polarizati" by Ravi Teja Velpula, Barsha Jain et al.
 

High-efficiency InGaN blue LEDs with reduced positive sheet polarization

Document Type

Article

Publication Date

6-1-2022

Abstract

The formation of positive sheet polarization charges at the interface of the last quantum barrier (QB) and the conventional p-type electron-blocking layer (EBL) creates significant band bending, leading to severe electron leakage and poor hole injection in III-nitride light-emitting diodes. We report that the positive sheet polarization charges are mitigated by employing a lattice matched AlGaN last QB. Electron leakage is dramatically reduced due to the increased effective conduction band height at the last QB and EBL. Furthermore, it favors hole injection into the active region due to the reduced effective valance band height for EBL.

Identifier

85133256673 (Scopus)

Publication Title

Applied Optics

External Full Text Location

https://doi.org/10.1364/AO.458463

e-ISSN

21553165

ISSN

1559128X

PubMed ID

36255983

First Page

4967

Last Page

4970

Issue

16

Volume

61

Grant

VAST07.02/21-22

Fund Ref

Vietnam Academy of Science and Technology

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