High-efficiency InGaN blue LEDs with reduced positive sheet polarization
Document Type
Article
Publication Date
6-1-2022
Abstract
The formation of positive sheet polarization charges at the interface of the last quantum barrier (QB) and the conventional p-type electron-blocking layer (EBL) creates significant band bending, leading to severe electron leakage and poor hole injection in III-nitride light-emitting diodes. We report that the positive sheet polarization charges are mitigated by employing a lattice matched AlGaN last QB. Electron leakage is dramatically reduced due to the increased effective conduction band height at the last QB and EBL. Furthermore, it favors hole injection into the active region due to the reduced effective valance band height for EBL.
Identifier
85133256673 (Scopus)
Publication Title
Applied Optics
External Full Text Location
https://doi.org/10.1364/AO.458463
e-ISSN
21553165
ISSN
1559128X
PubMed ID
36255983
First Page
4967
Last Page
4970
Issue
16
Volume
61
Grant
VAST07.02/21-22
Fund Ref
Vietnam Academy of Science and Technology
Recommended Citation
Velpula, Ravi Teja; Jain, Barsha; Patel, Moulik; Shakiba, Fatemeh Mohammadi; Toan, Ngo Quoc; Nguyen, Hoang Duy; and Nguyen, Hieu Pham Trung, "High-efficiency InGaN blue LEDs with reduced positive sheet polarization" (2022). Faculty Publications. 2915.
https://digitalcommons.njit.edu/fac_pubs/2915