Impact of a prestrained graded InGaN/GaN interlayer towards enhanced optical characteristics of a multi-quantum well LED based on silicon substrate
Document Type
Article
Publication Date
10-20-2022
Abstract
This paper presents alternate pairs of InGaN/GaN prestrained layers with varying indium compositions, which are inserted between the GaN/InGaN MQW active region and the n-GaN layer in a light-emitting diode (LED) nano structure in order to obtain enhanced optical characteristics. The device is mounted on a silicon substrate followed by a GaN buffer layer that promotes charge injection by minimizing the energy barrier between the electrode and active layers. The designed device attains more than 2.897% enhancement in efficiency when compared with the conventional LED, which is attributed to the reduction of a polarization field within the MQW region. The proposed device with 15% indium composition in the prestrained layer attains a maximum efficiency of 85.21% and a minimized efficiency droop of 3.848% at an injection current of 40 mA, with high luminous power in the output spectral range. The device also shows a minimum blueshift in the spectral range, indicating a decrease in the piezoelectric polarization.
Identifier
85140656886 (Scopus)
Publication Title
Applied Optics
External Full Text Location
https://doi.org/10.1364/AO.470083
e-ISSN
21553165
ISSN
1559128X
PubMed ID
36607020
First Page
8951
Last Page
8958
Issue
30
Volume
61
Grant
1944312
Fund Ref
Department of Science and Technology, Ministry of Science and Technology, India
Recommended Citation
Das, Samadrita; Lenka, Trupti Ranjan; Talukdar, Fazal Ahmed; Sadaf, Sharif Md; Velpula, Ravi Teja; and Nguyen, Hieu Pham Trung, "Impact of a prestrained graded InGaN/GaN interlayer towards enhanced optical characteristics of a multi-quantum well LED based on silicon substrate" (2022). Faculty Publications. 2585.
https://digitalcommons.njit.edu/fac_pubs/2585
