RF Triode-Sputtered Mercury Cadmium Telluride Thin Films

Document Type

Article

Publication Date

1-1-1980

Abstract

Experimental results presented for (Hg0.75Cd0.25)Te film deposited on silicon substrates indicate that large-area photodiode detector arrays on electronically active substrates can be made by RF triode-sputtering large-area (25.5-cm2) pressed-powder targets with mercury ions. Films with the same composition as the target were obtained using either a homogenized powder mixture of CdTe and HgTe or a powder ground from a polycrystalline (Hg0.75Cd0.25)Te ingot. X-ray diffraction measurements shows that as-deposited polycrystalline films can have 100-percent (111) orientation when deposited on heated (111) silicon substrates whose surface oxide has been etched away. Dual-beam transmission spectrophotometry show that the (111) oriented films have a cutoff wavelength of about 6 μm and a sharp absorption edge, similar to that for single-crystal bulk material with 25 mole percent cadmium telluride. Other films sputtered under less than optimum sputtering conditions have a mixture of (311) and (111) crystal orientations and high absorption for incident wavelengths longer than that of the cutoff value. SEM measurements show that the grain size of the best unannealed films studied was about 1 μm. Copyright © 1980 by The Institute of Electrical and Electronics Engineers, Inc.

Identifier

0018973560 (Scopus)

Publication Title

IEEE Transactions on Electron Devices

External Full Text Location

https://doi.org/10.1109/T-ED.1980.19814

e-ISSN

15579646

ISSN

00189383

First Page

29

Last Page

32

Issue

1

Volume

27

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