Optical Constants of Silicon by Unpolarized Incident Radiation

Document Type

Article

Publication Date

1-1-1980

Abstract

It is shown that the reflectance of modulated unpolarized incident radiation at the pseudo-polarizing angle can be used to accurately determine the optical constants of absorbing media in the visible region. The approximation that the principal angle of incidence occurs at the pseudo-polarizing angle is assumed to contribute negligible error. Expressions for the refractive index, n, and the extinction coefficient, K, are given in terms of the pseudo-polarizing angle and the reflectance ratio of the parallel (to the plane of incidence) reflected wave vector intensity to the normal reflected wave vector intensity. The experimental values for n and K are determined at wavelengths in the visible spectrum between 4250 and 5750Å, for boron-doped p-type highly polished silicon of 0.01 and 95 Ω-cm resistivity. These values correspond to impurity concentrations of about 10-3-10-6%, respectively. The 0.01 Ω-cm K curve indicates the possibility that direct optical transitions between acceptor levels and the conduction band can be resolved and that this occurs at about 5250Å (≃2.4eV). © 1980, The Electrochemical Society, Inc. All rights reserved.

Identifier

0019009240 (Scopus)

Publication Title

Journal of the Electrochemical Society

External Full Text Location

https://doi.org/10.1149/1.2129794

e-ISSN

19457111

ISSN

00134651

First Page

953

Last Page

956

Issue

4

Volume

127

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