Properties of RF triode-sputtered (Hg1-xCdx.)Te thin films

Document Type

Conference Proceeding

Publication Date

6-11-1981

Abstract

The advantages of r.f. triode sputtering in a Hg atmosphere for deposition of (Hg1-xCdx)Te thin films for low-cost photoconductor and photovoltatic infrared detector arrays on electronically-active Si substrates are discussed. It is shown by optical absorption data that the composition of films can be changed from x = 0.1 to 0.27 by changing the relative percentages of HgTe and CdTe particles in sputtering targets, made by cold-pressing a homogenized mixture of these particles. Changes in the physical topography and composition of the surface of pressed-powder targets when bombarded with Hg are described. The mobility and implied carrier concentrations at 24 and -188°C of n and p-type films with different compositions in the 0.18 < x < 0. 27 range were measured by the Van der Pauw technique. The films were deposited under different sputtering conditions onto high resistivity CdTe and Si substrates with (111) surface orientation. The film properties were improved by post-deposition annealing in a Hg atmosphere using a two-zone furnace. An increase in electron mobility of n-type films to values up to 17 and 50 percent of those for bulk material at -188 and 24°C respectively were obtained using unoptimized annealing parameters. © 1981 SPIE.

Identifier

0019647035 (Scopus)

Publication Title

Proceedings of SPIE the International Society for Optical Engineering

External Full Text Location

https://doi.org/10.1117/12.965799

e-ISSN

1996756X

ISSN

0277786X

First Page

107

Last Page

117

Volume

285

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