Effect of impurity atom size on grown-in dislocation density of crystals of III-V compounds

Document Type

Article

Publication Date

1-1-1982

Abstract

A study of the literature on reduction of grown-in dislocation density in crystals of III-V compounds by heavy doping with various impurities has uncovered errors and probable misinterpretation. On re-evaluation of the available data from the viewpoint of atomic size, a rather consistent picture has been obtained. Impurity atoms smaller than the host atoms they displace bring about a major reduction in etch pit density while those larger than the host atoms also have a beneficial effect, though of a lesser magnitude. The new interpretation leads to a suggested method for preparation of dislocation-free and precipitate-free crystals with a lower impurity concentration. © 1982.

Identifier

0020203927 (Scopus)

Publication Title

Materials Research Bulletin

External Full Text Location

https://doi.org/10.1016/0025-5408(82)90225-2

ISSN

00255408

First Page

1401

Last Page

1406

Issue

11

Volume

17

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