Processing & characterization of thin films of Sio2 on Si for integrated circuits

Authors

N. M. Ravindra, New Jersey Institute of Technology
W. N. Carr, New Jersey Institute of Technology
O. L. Russo, New Jersey Institute of Technology
D. Fathy, Oak Ridge National Laboratory
A. R. Heyd, Pennsylvania State University
K. Vedam, Pennsylvania State University
J. Narayan, NC State College of Engineering

Document Type

Conference Proceeding

Publication Date

8-16-1988

Abstract

Experimental studies of the low temperature (800° C) processing and characterization of thermally grown films of SiO2 on Si in the thickness range of 1 to 20 nm is reported here. Breakdown voltage, High Resolution Transmission Electron Microscopy (HRTEM), Electrolyte Electro Reflectance (EER), single wavelength and Spectroscopic Ellipsometry (SE) techniques have been employed to characterize these films. Nearly Free Electron (NFE) model such as that of Penn is then employed to interpret the energies corresponding to the peak in the EER & SE spectra. © 1988 SPIE.

Identifier

84958492889 (Scopus)

Publication Title

Proceedings of SPIE the International Society for Optical Engineering

External Full Text Location

https://doi.org/10.1117/12.947395

e-ISSN

1996756X

ISSN

0277786X

First Page

84

Last Page

96

Volume

945

Recommended Citation

Ravindra, N. M.; Carr, W. N.; Russo, O. L.; Fathy, D.; Heyd, A. R.; Vedam, K.; and Narayan, J., "Processing & characterization of thin films of Sio2 on Si for integrated circuits" (1988). Faculty Publications. 20861.
https://digitalcommons.njit.edu/fac_pubs/20861