Investigation of Dry Etching Damage Using P+-N Diodes

Document Type

Article

Publication Date

1-1-1989

Abstract

p+-n diodes were fabricated on n-type, <111>, bulk silicon wafers using a standard bipolar process. Reactive ion etching, of silicon dioxide was performed over the diode junction. The forward current-voltage characteristics of the reactive ion-etched samples show an increase in recombination current and deterioration of the diode ideality factor, compared to the control unetched samples and samples prepared by normal wet etch process. The reverse I-V characteristics show a high leakage current and a lowered breakdown voltage. Annealing of these diodes at different temperatures shows a recovery in the I-V characteristics and an increase in breakdown voltage. © 1989, The Electrochemical Society, Inc. All rights reserved.

Identifier

0024301999 (Scopus)

Publication Title

Journal of the Electrochemical Society

External Full Text Location

https://doi.org/10.1149/1.2096591

e-ISSN

19457111

ISSN

00134651

First Page

234

Last Page

238

Issue

1

Volume

136

This document is currently not available here.

Share

COinS