Carrier tunneling in nanocrystalline silicon-silicon dioxide superlattices: A weak coupling model

Authors

B. V. Kamenev, Newark College of Engineering
G. F. Grom, Agere Systems
D. J. Lockwood, National Research Council Canada
J. P. McCafrey, National Research Council Canada
B. Laikhtman, Hebrew University of Jerusalem
L. Tsybeskov, Newark College of Engineering

Document Type

Article

Publication Date

6-1-2004

Abstract

Differential conductivity measurements in partially disordered nanocrystalline Si-amorphous SiO2 superlattices reveal a double-peak structure associated with tunneling via energy levels of light and heavy holes. The theoretical model and numerical simulations presented here show good agreement with experiment and predict that this system does not have stable solutions for an injected carrier concentration greater than 10¹⁷ cm^-3. Similar to a weakly coupled superlattice, a larger carrier concentration results in current instabilities. These instabilities have been observed and can be partially suppressed by using pulsed carrier photoinjection.

Identifier

42749103091 (Scopus)

Publication Title

Physical Review B Condensed Matter and Materials Physics

External Full Text Location

https://doi.org/10.1103/PhysRevB.69.235306

ISSN

01631829

First Page

1

Last Page

235306

Issue

23

Volume

69

Recommended Citation

Kamenev, B. V.; Grom, G. F.; Lockwood, D. J.; McCafrey, J. P.; Laikhtman, B.; and Tsybeskov, L., "Carrier tunneling in nanocrystalline silicon-silicon dioxide superlattices: A weak coupling model" (2004). Faculty Publications. 20344.
https://digitalcommons.njit.edu/fac_pubs/20344