Transfer of single crystalline silicon nanolayer onto alien substrate

Document Type

Article

Publication Date

6-1-2004

Abstract

Starting from the 60-nm node, future generations of mainstream semiconductor devices (i.e., CMOS) will be mostly manufactured from silicon-on-insulator (SOI) initial substrates with the top silicon layer having a thickness 50 nm or less. We describe a process that is capable for transfer of nanoscale thick layers. The layer is delaminated from a single crystalline silicon substrate and laminated onto another substrate, thus resulting in SOI. The process includes: 1) forming a trap layer for hydrogen in an initial substrate; 2) delivery of hydrogen to the traps by diffusion of monatomic hydrogen; 3) evolving the trapped hydrogen into a layer of hydrogen platelets; 4) stiffening of the surface of the initial substrate by laminating to another substrate; and 5) delaminating a layer from the initial substrate along the hydrogen platelet layer. Details of the new layer transfer process are described. A depth where the buried trap layer locates is critical for the process. An implantation of heavy ions is used to form the trap layer. A trap capacity for hydrogen is evaluated as a function of implantation conditions. Plasma hydrogenation is used to deliver atomic hydrogen to the traps. Electron cyclotron resonance, microwave, RF, and dc plasma are compared as the hydrogenation sources. Dependence of a thickness of a transferred layer as a function of the mass of implanted ions and implantation energy is described. Types of layer transfer faults are also described. Mechanisms of the layer transfer faults are suggested. We discuss limits of scaling down of the thickness of the layer that is transferred from one substrate to another. The scaling limit of our process is compared to the limits of other (SIMOX, Smart-Cut, and ELTRAN) processes.

Identifier

2942706044 (Scopus)

Publication Title

IEEE Transactions on Nanotechnology

External Full Text Location

https://doi.org/10.1109/TNANO.2004.828519

ISSN

1536125X

First Page

225

Last Page

229

Issue

2

Volume

3

Grant

DMI-0216676

Fund Ref

National Science Foundation

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