Charge trapping and interface characteristics of thermally evaporated HfO 2

Document Type

Article

Publication Date

10-11-2004

Abstract

Charge trapping and interface characteristics of hafnium oxide (HfO 2) films, grown by standard thermal evaporation, were investigated. High frequency capacitance-voltage and conductance measurements were carried out at various temperatures on aluminum gate metal-oxide-semiconductor capacitors, annealed at 450°C. A hysteresis below 30 mV was observed. Electrical data show, that charge trapping in HfO 2 initially increases with decrease in temperature while it shows a turnaround phenomenon when the temperature is decreased further. Interface state density distribution observed at low temperatures suggests that charge-trapping behavior of these films is mostly due to shallow traps at the interface. © 2004 American Institute of Physics.

Identifier

8644259229 (Scopus)

Publication Title

Applied Physics Letters

External Full Text Location

https://doi.org/10.1063/1.1805708

ISSN

00036951

First Page

3289

Last Page

3291

Issue

15

Volume

85

Grant

ECS-0140584

Fund Ref

National Science Foundation

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