Electrical characteristics of thermally evaporated HfO2

Authors

R. Garg, New Jersey Institute of Technology
N. A. Chowdhury, New Jersey Institute of Technology
M. Bhaskaran, Sarnoff Corporation
P. K. Swain, Sarnoff Corporation
D. Misra, New Jersey Institute of Technology

Document Type

Article

Publication Date

11-26-2004

Abstract

The electrical characteristics of hafnium oxide (HfO2) films, grown by standard thermal evaporation of hafnium while adding oxygen at constant partial pressure during evaporation, were investigated for the first time. The dielectric constant as measured by the capacitance-voltage technique is estimated to be in the range of 18-25. Metal oxide semiconductor (MOS) capacitors using HfO2 as dielectric and annealed at 450°C show a hysteresis below 30 mV. A low leakage current density of <10^-7 A/cm² at 1 V and reduced bulk oxide charges 1.61 × 10 ¹¹/cm² were also observed. The interface state density and low-temperature charge trapping behavior of these films were also investigated. Observed characteristics indicate that HfO2 films deposited by standard thermal evaporation are suitable for MOS device applications. © 2004 The Electrochemical Society. All rights reserved.

Identifier

8644271693 (Scopus)

Publication Title

Journal of the Electrochemical Society

External Full Text Location

https://doi.org/10.1149/1.1784212

ISSN

00134651

First Page

F215

Last Page

F219

Issue

10

Volume

151

Recommended Citation

Garg, R.; Chowdhury, N. A.; Bhaskaran, M.; Swain, P. K.; and Misra, D., "Electrical characteristics of thermally evaporated HfO2" (2004). Faculty Publications. 20146.
https://digitalcommons.njit.edu/fac_pubs/20146