Optical and electronic characteristics of single walled carbon nanotubes and silicon nanoclusters by tetrahertz spectroscopy
Document Type
Article
Publication Date
12-1-2004
Abstract
We have conducted visible pump-THz (THz - terahertz) probe measurements on single wall carbon nanotubes deposited on quartz substrates. Our results suggest that the photoexcited nanotubes exhibit localized transport due to Lorentz-type photoinduced localized states from 0.2 to 0.7 THz. Upon modeling the THz transmission through the photoexcited layer with an effective dielectric constant given by Maxwell-Garnett theory we found that the data are best fit by a broad Lorentz state at 0.5 THz. These experiments were repeated for ion-implanted, 3-4 nm Si nanoclusters in quartz for which a similar behavior was observed. © 2004 American Institute of Physics.
Identifier
21044448402 (Scopus)
Publication Title
Journal of Applied Physics
External Full Text Location
https://doi.org/10.1063/1.1805720
ISSN
00218979
First Page
6685
Last Page
6689
Issue
11
Volume
96
Grant
DAAD 19-01-1-0009
Fund Ref
Army Research Office
Recommended Citation
Altan, Hakan; Huang, Feng; Federici, John F.; Lan, Aidong; and Grebel, Haim, "Optical and electronic characteristics of single walled carbon nanotubes and silicon nanoclusters by tetrahertz spectroscopy" (2004). Faculty Publications. 20034.
https://digitalcommons.njit.edu/fac_pubs/20034
