A generalized electron transport model in photodetectors for high-speed imaging

Document Type

Article

Publication Date

11-1-2005

Abstract

Photoelectron transport in a photodetector in an ultra-high frame rate image sensor under the uniform illumination condition is investigated. The charge readout time in a multi-implant photodetector is estimated using a generalized model with both diffusion equation and continuity equations. The maximum effective diffusion length was assigned to each implanted region after taking into account the fringing field drift due to multiple implants. Assuming that the charge on each section is directly proportional to its area under uniform illumination, the total charge transport as a function of time is obtained by the superposition of charge contribution of all implanted regions. By increasing the number of implants in the photodetector it may be possible to collect more than 10 million frames s-1. The design effects are also investigated. The model showed excellent match with experimental results. © 2005 IOP Publishing Ltd.

Identifier

27144456152 (Scopus)

Publication Title

Semiconductor Science and Technology

External Full Text Location

https://doi.org/10.1088/0268-1242/20/11/004

ISSN

02681242

First Page

1122

Last Page

1126

Issue

11

Volume

20

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