Coexistence of fast and slow luminescence in three-dimensional Si/Si1-xGex nanostructures

Document Type

Article

Publication Date

11-15-2005

Abstract

We report an experimental observation of both a fast (∼10μs) and a slow (∼10ms) photoluminescence (PL) that coexist in Ge-rich (x>0.5) islandlike, three-dimensional Si/Si1-xGex nanostructures. We present a quantitative model that explains the observed PL lifetime dependence on carrier concentration, temperature, and detection wavelength. The PL dynamics are found to be determined by the excess carrier concentration: the fast PL is associated with a dynamic type I and the slow PL with a type II energy band alignment in Ge-rich Si/SiGe nanostructures. © 2005 The American Physical Society.

Identifier

29744433441 (Scopus)

Publication Title

Physical Review B Condensed Matter and Materials Physics

External Full Text Location

https://doi.org/10.1103/PhysRevB.72.193306

e-ISSN

1550235X

ISSN

10980121

Issue

19

Volume

72

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