Optical properties of Ge nanowires grown on silicon (100) and (111) substrates
Document Type
Conference Proceeding
Publication Date
12-13-2005
Abstract
We report Raman scattering and photoluminescence (PL) measurements of Ge nanowires (NWs) grown by chemical vapor deposition on silicon substrates with (100) and (111) crystallographic orientations. A sharp and narrow Raman peak at ∼ 300 cm -1 indicates single-crystal quality of Ge NWs ∼40 nm in diameter and approximately a micrometer in length. The absence of Si-Ge vibrations in Raman spectra shows that SiGe interdiffusion is insignificant for most of the NW volume. Low temperature PL spectra and the PL intensity-temperature dependence strongly indicate that the observed emission originates mostly at Ge NW Si substrate interfaces, where Si-Ge intermixing has been detected. We found that such interfaces are formed differently for (111) and (100) oriented Si substrates due to the strongly oriented <111> preferential growth direction of Ge NWs.
Identifier
28544445206 (Scopus)
Publication Title
Proceedings Electrochemical Society
First Page
49
Last Page
56
Volume
PV 2004-13
Recommended Citation
Kamenev, B. V.; Sharma, V.; Tsybeskov, L.; and Kamins, T. I., "Optical properties of Ge nanowires grown on silicon (100) and (111) substrates" (2005). Faculty Publications. 19293.
https://digitalcommons.njit.edu/fac_pubs/19293
