Far infrared studies of silicon using terahertz spectroscopy

Document Type

Conference Proceeding

Publication Date

12-1-2005

Abstract

In this work, the optical properties of p- type silicon wafers, of various thicknesses, have been studied in the frequency range of 0.2 - 1.2 THz. It is seen that, for low resistivity silicon, the optical properties are dominated by the presence of dopants. The analysis technique deployed in the present work explores a general iterative procedure to determine the real and imaginary parts of the complex dielectric constant without utilizing Kramers-Kronig relationships. This study not only holds scientific relevance in material science but also opens up rich avenues for novel applications of terahertz spectroscopy to semiconductors.

Identifier

33845516349 (Scopus)

ISBN

[0873396456, 9780873396455]

Publication Title

Materials Science and Technology

ISSN

15462498

First Page

39

Last Page

48

Volume

4

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