Low-power multilevel resistive switching in β-Ga2O3 based RRAM devices

Authors

Ravi Teja Velpula, Newark College of Engineering
Barsha Jain, Newark College of Engineering
Hieu Pham Trung Nguyen, Newark College of Engineering

Document Type

Article

Publication Date

2-12-2023

Abstract

In this study, multilevel switching at low-power in Ti/TiN/Ga2O3/Ti/Pt resistive random-access memory (RRAM) devices has been systematically studied. The fabricated RRAM device exhibits an excellent non-overlapping window between set and reset voltages of ∼1.1 V with a maximum R off/R on ratio of ∼10³. Moreover, to the best of our knowledge, the multi-bit storage capability of these RRAM devices with a reasonably high R off/R on ratio is experimentally demonstrated, for the first time, for lower compliance currents at 10 μA, 20 μA and 50 μA. The multi-bit resistive switching behavior of the Ga2O3 RRAM device at a low compliance current paves the way for low-power and high-density data storage applications.

Identifier

85143644905 (Scopus)

Publication Title

Nanotechnology

External Full Text Location

https://doi.org/10.1088/1361-6528/aca418

e-ISSN

13616528

ISSN

09574484

PubMed ID

36399780

Issue

7

Volume

34

Grant

NNCI‐2025233

Fund Ref

National Science Foundation

Recommended Citation

Velpula, Ravi Teja; Jain, Barsha; and Nguyen, Hieu Pham Trung, "Low-power multilevel resistive switching in β-Ga2O3 based RRAM devices" (2023). Faculty Publications. 1926.
https://digitalcommons.njit.edu/fac_pubs/1926