Evidence of deep energy states from low temperature measurements and their role in charge trapping in metal gate/hf-silicate gate stacks

Document Type

Conference Proceeding

Publication Date

1-1-2006

Abstract

Pre-existing electron and hole trap energy levels, lying deep within the bulk high-κ bandgap, are experimentally observed from low temperature measurements for the first time in metal organic chemical vapor deposited (MOCVD) TiN/HfSixOy based gate stacks. Their role in trapping under constant voltage and substrate hot hole stress conditions is investigated. Mixed degradation due to both electron and hole trapping in the deep pre-existing bulk traps, which induces a turn-around effect in fiatband voltage shift (ΔVFB), is observed for n-channel MOS capacitors under gate injection. Bulk hole trap generation, which causes ΔV FB to follow tn power law dependence, is observed for p+-ringed p-channel MOS capacitors under substrate hot hole injection. Activation energies of the stress induced traps and pre-existing deep defects are experimentally found to be different. copyright The Electrochemical Society.

Identifier

33845254533 (Scopus)

ISBN

[1566774446]

Publication Title

Ecs Transactions

External Full Text Location

https://doi.org/10.1149/1.2209322

e-ISSN

19386737

ISSN

19385862

First Page

767

Last Page

775

Issue

5

Volume

1

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