1/f noise performance of MOSFETs with HfO2 and metal gate on Ge-on-insulator substrates

Document Type

Article

Publication Date

8-1-2006

Abstract

The low frequency (1/f) noise performance of n- and p-MOSFETs with HfO2 and TiN-TaN metal gate on GeOI substrates has been investigated. The LF noise spectra are of the 1/fγ type, with γ>1. The current noise spectral density is typically one decade higher than for silicon counterparts. The behavior of the noise characteristics points to carrier trapping as the prevailing 1/f noise mechanism. Using a tunneling coefficient α=6.5×107 cm-1 for the Ge/HfO2 system, the extracted volume and surface trap densities are in the range of 1×1020/cm3 eV and a few 1012/cm2, respectively. This is of the same order as the interface trap densities, obtained from charge pumping. It is believed that the Ge/interfacial layer (IL) quality could be responsible for the significantly higher trap densities and noise, compared with Si/HfO2/ TiN-TaN MOSFETs. © 2006 Elsevier Ltd. All rights reserved.

Identifier

33845218048 (Scopus)

Publication Title

Materials Science in Semiconductor Processing

External Full Text Location

https://doi.org/10.1016/j.mssp.2006.08.018

ISSN

13698001

First Page

721

Last Page

726

Issue

4-5 SPEC. ISS.

Volume

9

Grant

ECS-0140584

Fund Ref

National Science Foundation

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