Effect of Ge surface nitridation on the Ge/HfO2/Al MOS devices

Document Type

Article

Publication Date

9-1-2006

Abstract

In this paper, the effect of Ge surface nitridation on Ge/HfO 2/Al MOS capacitors has been studied. Low-frequency measurements indicated the presence of significant interface states in surface nitrided devices. As temperature decreased from 300 to 140 K, electron trapping increased monotonically in both nitrided and nonnitrided devices, but the interface state density didn't show a major fluctuation in nitrided devices as compared to nonnitrided devices. A constant voltage stress was applied on both samples to test their behavior under stress. Electron trapping was dominant in nonnitrided devices at lower stress voltages. After relaxation, detrapping was observed as devices recovered to their original state. Nitrided devices showed hole trapping after stress, but further device deterioration was observed after relaxation. © 2006 IEEE.

Identifier

33750837273 (Scopus)

Publication Title

IEEE Transactions on Device and Materials Reliability

External Full Text Location

https://doi.org/10.1109/TDMR.2006.881457

e-ISSN

15304388

ISSN

15304388

First Page

455

Last Page

460

Issue

3

Volume

6

Grant

0140584

Fund Ref

National Science Foundation

This document is currently not available here.

Share

COinS