Excitation-dependent photoluminescence in GeSi Stranski-Krastanov nanostructures

Document Type

Article

Publication Date

10-20-2006

Abstract

In GeSi Stranski-Krastanov nanostructures grown by chemical vapor deposition, the authors find ∼30 meV /decade photoluminescence (PL) spectral shift toward greater photon energies as excitation intensity increases from 0.1 to 104 W cm2. The PL lifetime exhibits strong spectral dependence, and it decreases from ∼20 μs at 0.77 eV to 200 ns at 0.89 eV. The authros attribute the observed PL spectral shift and shorter PL lifetime at higher photon energies to an increasing contribution from recombination between holes populating excited Ge cluster energy states and electrons in SiGe alloy cluster regions. © 2006 American Institute of Physics.

Identifier

33750011468 (Scopus)

Publication Title

Applied Physics Letters

External Full Text Location

https://doi.org/10.1063/1.2361198

ISSN

00036951

Issue

15

Volume

89

Fund Ref

National Science Foundation

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