Zinc oxide (ZnO) and bandgap engineering for photoelectrochemical splitting of water to produce hydrogen
Document Type
Conference Proceeding
Publication Date
1-1-2012
Abstract
We report material synthesis, characterization, and photoelectrochemical (PEC) measurements to explore methods to effectively reduce the band gap of ZnO for the application of PEC water splitting. We find that the band gap reduction of ZnO can be achieved by N and Cu incorporation into ZnO. We demonstrate that heavy Cu-incorporation lead to both p-type doping and band gap significantly reduced ZnO thin films. The p-type conductivity in our ZnO:Cu films is clearly revealed by Mott-Schottky plots. We further have successfully synthesized ZnO:N thin films with various reduced band gaps by reactive RF magnetron sputtering. The band gap reduction and photoresponse with visible light for N- and Cu-incorporated ZnO thin films are demonstrated.
Identifier
84870541779 (Scopus)
ISBN
[9781118273357]
Publication Title
Ceramic Transactions
External Full Text Location
https://doi.org/10.1002/9781118511350.ch24
ISSN
10421122
First Page
231
Last Page
236
Volume
235
Recommended Citation
Shet, Sudhakar; Yan, Yanfa; Wang, Heli; Ravindra, Nuggehalli; Turner, John; and Al-Jassim, Mowafak, "Zinc oxide (ZnO) and bandgap engineering for photoelectrochemical splitting of water to produce hydrogen" (2012). Faculty Publications. 18432.
https://digitalcommons.njit.edu/fac_pubs/18432
