A compact CMOS 3-D magnetic field sensor

Document Type

Conference Proceeding

Publication Date

1-1-2012

Abstract

This work presents a compact three-dimensional (3-D) magnetic field sensor design in standard CMOS technology. A ring-shape vertical hall device for X- and Y-direction, and a split-drain horizontal hall device for Z-direction are combined to implement the 3-D sensor. This merged design has the advantage of less area and lower power consumption. The sensitivities of vertical hall device (ring-shape magneto-resistor) and horizontal hall device (split-drain MAGFET) are estimated to be 0.11V/T and 2.88V/T respectively. Z-direction demonstrates a higher sensitivity. A high gain cascade differential amplifier is integrated with the sensor to further amplify the signal. ©The Electrochemical Society.

Identifier

84869014815 (Scopus)

ISBN

[9781566779555, 9781607683131]

Publication Title

Ecs Transactions

External Full Text Location

https://doi.org/10.1149/1.3700919

e-ISSN

19386737

ISSN

19385862

First Page

543

Last Page

556

Issue

3

Volume

45

This document is currently not available here.

Share

COinS