High carrier mobility in transparent Ba 1-xLa xSnO 3 crystals with a wide band gap

Authors

X. Luo, Pohang University of Science and Technology
Y. S. Oh, Rutgers Center for Emergent Materials
A. Sirenko, New Jersey Institute of Technology
P. Gao, New Jersey Institute of Technology
T. A. Tyson, New Jersey Institute of Technology
K. Char, Seoul National University
S. W. Cheong, Pohang University of Science and Technology

Document Type

Article

Publication Date

4-23-2012

Abstract

We discovered that perovskite (Ba,La)SnO 3 can have excellent carrier mobility even though its band gap is large. The Hall mobility of Ba 0.98La 0.02SnO 3 crystals with the n-type carrier concentration of ∼8-10 × 10 ¹⁹cm ^-3 is found to be ∼103 cm ² V ^-1 s ^-1 at room temperature, and the precise measurement of the band gap δ of a BaSnO 3 crystal shows δ = 4.05 eV, which is significantly larger than those of other transparent conductive oxides. The high mobility with a wide band gap indicates that (Ba,La)SnO 3 is a promising candidate for transparent conductor applications and also epitaxial all-perovskite multilayer devices. © 2012 American Institute of Physics.

Identifier

84860341471 (Scopus)

Publication Title

Applied Physics Letters

External Full Text Location

https://doi.org/10.1063/1.4709415

ISSN

00036951

Issue

17

Volume

100

Grant

DE-AC02-98CH10886

Fund Ref

U.S. Department of Energy

Recommended Citation

Luo, X.; Oh, Y. S.; Sirenko, A.; Gao, P.; Tyson, T. A.; Char, K.; and Cheong, S. W., "High carrier mobility in transparent Ba 1-xLa xSnO 3 crystals with a wide band gap" (2012). Faculty Publications. 18285.
https://digitalcommons.njit.edu/fac_pubs/18285