Fast light-emitting silicon-germanium nanostructures for optical interconnects

Document Type

Article

Publication Date

10-1-2012

Abstract

Epitaxially-grown Si/SiGe quantum dot complexes produce efficient photoluminescence and electroluminescence in the desired spectral range of 1.3-1.6μm. The latest progress in our understanding of the physics of carrier recombination in Si/SiGe nanostructures is reviewed, and a new route toward CMOS compatible light emitters is proposed. © Her Majesty the Queen in Rights of Canada 2012.

Identifier

84867229522 (Scopus)

Publication Title

Optical and Quantum Electronics

External Full Text Location

https://doi.org/10.1007/s11082-012-9549-0

e-ISSN

1572817X

ISSN

03068919

First Page

505

Last Page

512

Issue

12-13

Volume

44

Fund Ref

National Science Foundation

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