Understanding light-induced degradation of c-Si solar cells

Document Type

Conference Proceeding

Publication Date

11-26-2012

Abstract

We discuss results of our investigations toward understanding bulk and surface components of light-induced degradation (LID) in low-Fe c-Si solar cells. The bulk effects, arising from boron-oxygen defects, are determined by comparing degradation of cell parameters and their thermal recovery, with that of the minority-carrier lifetime (τ) in sister wafers. We found that the recovery of τ in wafers takes a much longer annealing time compared to that of the cell. We also show that cells having SiN:H coating experience a surface degradation (ascribed to surface recombination). The surface LID is seen as an increase in the q/2kT component of the dark saturation current (J02). The surface LID does not recover fully upon annealing and is attributed to degradation of the SiN:H-Si interface. This behavior is also exhibited by mc-Si cells that have very low oxygen content and do not show any bulk degradation. © 2012 IEEE.

Identifier

84869413493 (Scopus)

ISBN

[9781467300643]

Publication Title

Conference Record of the IEEE Photovoltaic Specialists Conference

External Full Text Location

https://doi.org/10.1109/PVSC.2012.6317798

ISSN

01608371

First Page

1115

Last Page

1120

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