ZrO2 layer thickness and field dependent leakage current in Ba0.8Sr0.2TiO3/ZrO2 heterostructured thin films

Document Type

Conference Proceeding

Publication Date

12-12-2012

Abstract

Heterostructured Ba0.8Sr0.2TiO3/ZrO 2/Ba0.8Sr0.2TiO3 thin films are fabricated on the platinized Si substrates by a sol-gel process. The current versus voltage measurements are taken on these films by varying the thickness of ZrO2 layer. We have found that inserting a ZrO2 layer in between two BST layers results in a significant reduction in leakage current which is very essential for the low dissipation energy and hence faster operation of memory devices. It is observed that the leakage current further decreases as the ZrO2 layer thickness increases. Also it is seen that different conduction mechanisms are contributing to the leakage current in the different field regions. Poole-Frenkel (PF), space charge limited current (SCLC), and Ohmic mechanisms are the dominating conduction processes in high, medium, and low field regions respectively. An energy band diagram is given to explain the Ohmic conduction in the low field region and the Poole-Frenkel conduction mechanism in the high field region for these devices. © 2012 Materials Research Society.

Identifier

84870688691 (Scopus)

ISBN

[9781605114316]

Publication Title

Materials Research Society Symposium Proceedings

External Full Text Location

https://doi.org/10.1557/opl.2012.1305

ISSN

02729172

First Page

97

Last Page

102

Volume

1454

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