Electrical damage to silicon devices due to reactive ion etching

Document Type

Article

Publication Date

12-1-1990

Abstract

The damage, due to reactive ion etching in CF4+O2 plasma, has been investigated by I-V and C-V techniques using silicon devices such as Au/n-Si Schottky contacts, p+-n diodes and MOS structures. The forward characteristics of a Schottky diode and an exposed junction diode are significantly degraded due to RIE. The amount of damage increases with increasing RF voltage. Considerable recovery occurred when various post RIE treatments were used for the lower RF voltage RIE etching. Almost no recovery upon annealing is found for the higher voltage etching, which suggests the formation of more complex, defect sites at the higher etching voltages. MOS capacitors as well as MOSFETS were used to investigate the damage effects of RIE in Si-SiO2 systems.

Identifier

0025401001 (Scopus)

Publication Title

Semiconductor Science and Technology

External Full Text Location

https://doi.org/10.1088/0268-1242/5/3/008

ISSN

02681242

First Page

229

Last Page

236

Issue

3

Volume

5

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