InGaAs shallow junction fabrication using Langmuir-Blodgett film diffusion source

Document Type

Article

Publication Date

12-1-1990

Abstract

A new source of cadmium diffusion in In0.53Ga0.47As has been developed. Langmuir-Blodgett (LB) deposited monolayers of cadmium arachidate have been used as a source of cadmium. The LB film has been characterized by grazing incidence infrared spectroscopy and Auger electron spectroscopy. Acceptor profiles obtained by differential Hall technique are presented. Highly doped (NA =2×1019 cm-3) shallow (xj ≊0.1-0.4 μm), p +-n junctions are obtained. Mesa-type p-i-n diodes with 125 μm diameter, ideality factor =1.3, Idark =5 nA at 20 V reverse bias, and Vbreakdown =30 V have been fabricated.

Identifier

0001433605 (Scopus)

Publication Title

Applied Physics Letters

External Full Text Location

https://doi.org/10.1063/1.102994

ISSN

00036951

First Page

2132

Last Page

2134

Issue

21

Volume

56

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