Electron Field Emission Through a Very Thin Oxide Laver
Document Type
Article
Publication Date
1-1-1991
Abstract
Field emission of an emitter covered with a very thin oxide layer is modeled and calculated numerically. The additional barrier due to the oxide layer is included in the tunneling problem by using the standard WKB method. The following physical parameters are considered: the oxide barrier height, the oxide conduction band-edge electron effective mass, and the oxide dielectric constant. Compared with the Fowler-Nordheim equation, which was derived for a clean metallic emitter, the calculation of this work shows a reduction of the emission current density from an emitter covered with an oxide layer a few monolayers thick. Strikingly, after reaching a minimum emission current density, the emission increases when the thickness of the oxide layer increases further. Finally, the emission current density is saturated and stabilized. © 1991 IEEE
Identifier
0026239523 (Scopus)
Publication Title
IEEE Transactions on Electron Devices
External Full Text Location
https://doi.org/10.1109/16.88528
e-ISSN
15579646
ISSN
00189383
First Page
2373
Last Page
2376
Issue
10
Volume
38
Recommended Citation
Yang, Guang, "Electron Field Emission Through a Very Thin Oxide Laver" (1991). Faculty Publications. 17635.
https://digitalcommons.njit.edu/fac_pubs/17635