Formation of silicon micromirrors by anisotropic etching

Document Type

Article

Publication Date

1-1-1991

Abstract

Vertical silicon structures, with dimensions of the order of 30 μm deep, 40 μm wide and 0.1-4 μm thick, are made by anisotropic etching of {100} wafers using SiO2 etch masks and EDP and KOH etchants. The mirror structures are to reflect 15 μm diameter optical beams. Two approaches for solving the serious problem of convex corner etching associated with the formation of micron-sized structures have been studied: one involves sacrificial structures and the other involves growth of a vertical oxide. © 1991.

Identifier

0026397825 (Scopus)

Publication Title

Sensors and Actuators A Physical

External Full Text Location

https://doi.org/10.1016/0924-4247(91)80021-G

ISSN

09244247

First Page

241

Last Page

250

Issue

3

Volume

29

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