Rapid isothermal processing of pt/ti contacts to p-type iii-v binary and related ternary materials

Document Type

Article

Publication Date

1-1-1992

Abstract

Results of an extensive study of the interfacial intermixing and interaction of the Pt/Ti bilayer metallization to seven III-V binary and related ternary compound semiconductor systems, as well as the contact electrical properties, are given. Pt/Ti contact to InAs and In0.53Ga0. 47As were ohmic as-deposited, while the same metallization scheme on GaAs, GaP, InP, In0.52A10. 48 as, and Ga0. 7Al0. 3As provided a rectifying contact as-deposited. The latter group of contacts, with the exception of InP and GaP, were transformed to an ohmic contact as a result of rapid thermal processing (RTP) at the temperature range of 300 to 450°C. A linear correlation between the semiconductor bandgap value and the Schottky-barrier height, measured in the Pt/Ti contacts, was observed. © 1992 IEEE

Identifier

0026623944 (Scopus)

Publication Title

IEEE Transactions on Electron Devices

External Full Text Location

https://doi.org/10.1109/16.108228

e-ISSN

15579646

ISSN

00189383

First Page

184

Last Page

192

Issue

1

Volume

39

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