Micromechanical characterization of dielectric thin films

Document Type

Conference Proceeding

Publication Date

1-1-1993

Abstract

A nanoindenter has been used to obtain Young's modulus and hardness data for a variety of dielectric thin films including silicon carbide, boron nitride, silicon carbonitride, and silicon oxide. These films, were synthesized by low pressure and plasma enhanced chemical vapor deposition, and had a thickness from 0.25 to a few microns. For the BN films, the modulus and hardness of the films decreased significantly as the deposition temperature increased while the reverse was true for the SiC films. In both cases, these changes were related to variations in the compositions of the deposits due to the onset of different reactions as the temperature is increased. Silicon carbonitride films oxidized slowly when synthesized at temperatures below 200°C and the Young's modulus of these films increased at higher deposition temperatures. For silicon dioxide, there was little change in the composition of the films over the deposition temperature range investigated (375-474°), thus correspondingly, small variations in the micromechanical properties of the material. However, moisture and hydrogen removal caused by an anneal at 800°C resulted in an significant increase in the modulus and hardness of these films.

Identifier

0027865940 (Scopus)

Publication Title

Materials Research Society Symposium Proceedings

External Full Text Location

https://doi.org/10.1557/proc-308-601

ISSN

02729172

First Page

601

Last Page

606

Volume

308

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