I-V characteristics and interface properties of Al-Si(P) contacts by the KrF excimer laser induced recrystallization

Document Type

Conference Proceeding

Publication Date

1-1-1993

Abstract

Al was deposited on the both sides of p-type Si by the sputtering, and the pulsed KrF excimer laser was irradiated on the one side and both sides of Al dot contacts. Due to the thin-high doping recrystallized layer, the transitions from the Schottky diodes to the ohmic contacts via backward diodes were observed in I-V measurement. Good N-shape negative resistances and notches were observed in the diodes, and ohmic contacts. Possible interpretations of the origin of these phenomena are discussed. And, the simple model of the effective barrier height reduction under the thermionic field emission was developed using WKB approximation, and tunneling theory. By the depth Auger analysis, Al, and Si profiles near Al-Si interface after the laser irradiation were observed.

Identifier

0027271008 (Scopus)

ISBN

[1558991786]

Publication Title

Materials Research Society Symposium Proceedings

ISSN

02729172

First Page

733

Last Page

738

Volume

283

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