The interstitial fraction of diffusivity of common dopants in Si
Document Type
Article
Publication Date
12-29-1997
Abstract
The relative contributions of interstitials and vacancies to diffusion of a dopant A in silicon are specified by the interstitial fraction of diffusivity, fA. Accurate knowledge of fA is required for predictive simulations of Si processing during which the point defect population is perturbed, such as transient enhanced diffusion. While experimental determination of fA is traditionally based on an underdetermined system of equations, we show here that it is actually possible to derive expressions that give meaningful bounds on fA without any further assumptions but that of local equilibrium. By employing a pair of dopants under the same point-defect perturbance, and by utilizing perturbances very far from equilibrium, we obtain experimentally fSb≤0.012 and fB≥0.98 at temperatures of ∼800°C which are the strictest bounds reported to date. Our results are in agreement with a theoretical expectation that a substitutional dopant in Si should either be a pure vacancy, or a pure interstitial(cy) diffuser. © 1997 American Institute of Physics.
Identifier
0001528106 (Scopus)
Publication Title
Applied Physics Letters
External Full Text Location
https://doi.org/10.1063/1.120527
ISSN
00036951
First Page
3862
Last Page
3864
Issue
26
Volume
71
Recommended Citation
Gossmann, H. J.; Haynes, T. E.; Stolk, P. A.; Jacobson, D. C.; Gilmer, G. H.; Poate, J. M.; Luftman, H. S.; Mogi, T. K.; and Thompson, M. O., "The interstitial fraction of diffusivity of common dopants in Si" (1997). Faculty Publications. 16601.
https://digitalcommons.njit.edu/fac_pubs/16601
